THE OBSERVATION OF HIGH-CONCENTRATIONS OF ARSENIC ANTI-SITE DEFECTS IN ELECTRON-IRRADIATED NORMAL-TYPE GAAS BY X-BAND ELECTRON-PARAMAGNETIC-RES

被引：100
作者：
GOSWAMI, NK
NEWMAN, RC
WHITEHOUSE, JE
机构：
来源：
SOLID STATE COMMUNICATIONS | 1981年 / 40卷 / 04期
关键词：
D O I：
10.1016/0038-1098(81)90864-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：473 / 477
页数：5
相关论文
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