IN-SITU MONITORING OF THE C(4X4) TO THE 2X4 SURFACE PHASE-TRANSFORMATION ON GAAS(001) BY GRAZING-INCIDENCE X-RAY-DIFFRACTION

被引：13

作者：

ETGENS, VH

SAUVAGESIMKIN, M

PINCHAUX, R

MASSIES, J

JEDRECY, N

WALDHAUER, A

GREISER, N

机构：

[1] CEA,MEN,CNRS,LURE,F-91405 ORSAY,FRANCE

[2] LAB MINERAL CRISTALLOG,F-75252 PARIS 05,FRANCE

[3] UNIV PARIS 06,F-75252 PARIS 05,FRANCE

[4] CNRS,LPSES,F-06560 VALBONNE,FRANCE

[5] CEA,SRSIM,DRECAM,F-91191 GIF SUR YVETTE,FRANCE

来源：

SURFACE SCIENCE | 1994年 / 320卷 / 03期

关键词：

D O I：

10.1016/0039-6028(94)90313-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The transition between the arsenic saturated c(4 X 4) and the As stabilised 2 X 4 reconstructed GaAs(001) surfaces has been followed in situ on a UHV grazing incidence X-ray diffractometer stage. X-ray diffraction lines specific of either structure have been recorded as a function of temperature. The intensity and lineshape evolution has enabled to propose a model for the transformation involving a homogeneous disordering of the c(4 X 4) surface through random As desorption followed by nucleation and growth of 2 X 4 domains. Under UHV conditions, the irreversible transition is observed over a temperature interval ranging from 330 degrees C to 380 degrees C.

引用

页码：252 / 258

页数：7

共 17 条

[1] SURFACE RECONSTRUCTIONS OF GAAS(100) OBSERVED BY SCANNING TUNNELING MICROSCOPY [J].