KINETICS OF THE REACTION OF GALLIUM-ARSENIDE WITH GASEOUS GALLIUM TRIIODINE

[1] BARYBIN AA, 1978, IZV AKAD NAUK SSSR N, V14, P1378

[2] VAPOR-PHASE ETCHING AND POLISHING OF GAAS USING ARSENIC-TRICHLORIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (09) : 1447 - 1448

[3] FAINER NI, 1977, IZV SIB OTD AN SS KN, P83

[4] VAPOR ETCHING OF GAAS SINGLE CRYSTALS WITH HCL GAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (12) : 1025 - &

[5] KIROVSKAYA IA, 1973, IZV AKAD NAUK SSSR N, V9, P1635

[6] REACTIONS OF GALLIUM ARSENIDE WITH WATER VAPOR AND HYDROGEN CHLORIDE GAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (11) : 1248 - 1253

[7] REPINSKII SM, 1975, ELEMENTARY PHYSICOCH

[8] RYUMYANTSEV YM, 1969, ZH FIZ KHIM, V43, P2975

[9] RATES OF REACTION OF HYDROGEN WITH IODINE [J]. JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (05) : 1292 - 1300

[10] YAROVOI AA, 1971, ZH NEORGAN MATERIALY, V7, P437

[1] BARYBIN AA, 1978, IZV AKAD NAUK SSSR N, V14, P1378

[2] VAPOR-PHASE ETCHING AND POLISHING OF GAAS USING ARSENIC-TRICHLORIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (09) : 1447 - 1448

[3] FAINER NI, 1977, IZV SIB OTD AN SS KN, P83

[4] VAPOR ETCHING OF GAAS SINGLE CRYSTALS WITH HCL GAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (12) : 1025 - &

[5] KIROVSKAYA IA, 1973, IZV AKAD NAUK SSSR N, V9, P1635

[6] REACTIONS OF GALLIUM ARSENIDE WITH WATER VAPOR AND HYDROGEN CHLORIDE GAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (11) : 1248 - 1253

[7] REPINSKII SM, 1975, ELEMENTARY PHYSICOCH

[8] RYUMYANTSEV YM, 1969, ZH FIZ KHIM, V43, P2975

[9] RATES OF REACTION OF HYDROGEN WITH IODINE [J]. JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (05) : 1292 - 1300

[10] YAROVOI AA, 1971, ZH NEORGAN MATERIALY, V7, P437