NEW OXIDE PHASE WITH WIDE BAND-GAP AND HIGH ELECTROCONDUCTIVITY, MGIN2O4

被引：125

作者：

UEDA, N

OMATA, T

HIKUMA, N

UEDA, K

MIZOGUCHI, H

HASHIMOTO, T

KAWAZOE, H

机构：

[1] Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Nagatsuta, Midori-ku

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 16期

关键词：

D O I：

10.1063/1.108374

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It was demonstrated that the MgIn2O4 spinel is a very promising material as a transparent electronic conductor. By the measurements of diffuse reflectance spectra, the optical band gap of MgIn2O4 (approximately 3.4 eV) was found to be wider than that of ITO (indium tin oxide). Electrical conductivity of the sintered sample of MgIn2O4 at room temperature has reached almost 10(2) S cm-1 with no intentional doping. The conduction was found to be due to electrons introduced from oxygen vacancies.

引用

页码：1954 / 1955

页数：2