MICROSTRUCTURE OF VISIBLY LUMINESCENT POROUS SILICON

被引：108

作者：

COLE, MW ^{[1
]}

HARVEY, JF ^{[1
]}

LUX, RA ^{[1
]}

ECKART, DW ^{[1
]}

TSU, R ^{[1
]}

机构：

[1] UNIV N CAROLINA,CHARLOTTE,NC 28223

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 22期

关键词：

D O I：

10.1063/1.106832

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The microstructure of luminescent porous silicon, formed by electrochemical etching of silicon wafers has been characterized by cross-sectional high-resolution transmission electron microscopy. Results of this study reveal the structure to consist of Si crystallites. The crystallites are approximately 3.5 nm in size and are randomly distributed throughout the porous Si region.

引用

页码：2800 / 2802

页数：3

共 10 条

[1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].