RELATION BETWEEN THE COMMON ANION RULE AND THE DEFECT MODEL OF SCHOTTKY-BARRIER FORMATION

被引：32

作者：

DAW, MS

SMITH, DL

机构：

来源：

SOLID STATE COMMUNICATIONS | 1981年 / 37卷 / 03期

关键词：

D O I：

10.1016/0038-1098(81)91014-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：205 / 208

页数：4

共 17 条

[1] SCHOTTKY-BARRIER HEIGHT OF AU ON N-GA1-XALXAS AS A FUNCTION OF ALAS CONTENT [J].

BEST, JS .

APPLIED PHYSICS LETTERS, 1979, 34 (08) :522-527

[2] (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS [J].

CHADI, DJ .

PHYSICAL REVIEW B, 1979, 19 (04) :2074-2082

[3] VACANCIES NEAR SEMICONDUCTOR SURFACES [J].

DAW, MS ;

SMITH, DL .

PHYSICAL REVIEW B, 1979, 20 (12) :5150-5156

[4] SURFACE VACANCIES IN INP AND GAAIAS [J].

DAW, MS ;

SMITH, DL .

APPLIED PHYSICS LETTERS, 1980, 36 (08) :690-692

[5]

DAW MS, UNPUBLISHED

[6] LOCALIZED DEFECTS IN III-V SEMICONDUCTORS [J].

JAROS, M ;

BRAND, S .

PHYSICAL REVIEW B, 1976, 14 (10) :4494-4505

[7] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J].

KAJIYAMA, K ;

MIZUSHIMA, Y ;

SAKATA, S .

APPLIED PHYSICS LETTERS, 1973, 23 (08) :458-459

[8]

KUECH T, UNPUBLISHED

[9] SCHOTTKY BARRIERS ON COMPOUND SEMICONDUCTORS - ROLE OF ANION [J].

MCCALDIN, JO ;

MCGILL, TC ;

MEAD, CA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :802-806

[10] CORRELATION FOR III-V SEMICONDUCTORS AND II-VI-SEMICONDUCTORS OF AU SCHOTTKY-BARRIER ENERGY WITH ANION ELECTRONEGATIVITY [J].

MCCALDIN, JO ;

MCGILL, TC ;

MEAD, CA .

PHYSICAL REVIEW LETTERS, 1976, 36 (01) :56-58

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