MBE GROWTH METHOD FOR PYRAMID-SHAPED GAAS MICRO CRYSTALS ON ZNSE(001) SURFACE USING GA DROPLETS

被引：61

作者：

CHIKYOW, T

KOGUCHI, N

机构：

[1] National Research institute for Metals, Tsukuba Laboratories, Tsukuba-shi, ibaraki

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 11期

关键词：

As-incorporated growth; Ga droplet; Molecular beam epitaxy; Quantum well boxes; ZnSe; GaAs; facet;

D O I：

10.1143/JJAP.29.L2093

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Micro crystals of GaAs which were pyramid-shaped and 35 nm in bottom length were grown epitaxially on a ZnSe(001) surface by using As-incorporated growth into Ga droplets for the first time. These micro crystals consisted of (111) facets. The size distribution was controlled within 16% in deviation. The As-incorporated lateral growth of GaAs was not observed. A newly proposed method was thought to be useful in fabricating quantum well boxes. © 1990 IOP Publishing Ltd.

引用

页码：L2093 / L2095

页数：3

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