MAGNETO-TUNNELING STUDIES OF CHARGE BUILDUP IN DOUBLE BARRIER DIODES

被引：18

作者：

THOMAS, D ^{[1
]}

CHEVOIR, F ^{[1
]}

BOIS, P ^{[1
]}

BARBIER, E ^{[1
]}

GULDNER, Y ^{[1
]}

VIEREN, JP ^{[1
]}

机构：

[1] ECOLE NORMALE SUPER,F-75231 PARIS 05,FRANCE

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1989年 / 5卷 / 02期

关键词：

Magnetic Field Effects - Quantum Theory - Semiconducting Aluminum Compounds - Semiconducting Gallium Arsenide;

D O I：

10.1016/0749-6036(89)90287-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The accumulation and depletion layers on each side of a Double Barrier Diode (DBD) are believed to have an important influence on DC and high frequency behaviour of such devices. A magnetic field (B) parallel to the growth axis induces Landau quantization in the structure. Very large current oscillations have been observed by sweeping B for fixed biases of the diode in the region before negative differential resistance. Variations of energy levels of the structure relative to the Fermi level in the emitter are deduced from these oscillations. We have observed a very slow variation of the period of oscillations versus total bias in GaAs-(AlGa) As DBD structures with large (50 nm) undoped spacer layers in emitter and collector. To explain this behaviour we propose a mechanism in which resonant tunneling occurs essentially between two localized states.

引用

页码：219 / 222

页数：4

共 13 条

[1] SEQUENTIAL TUNNELING DUE TO INTERSUBBAND SCATTERING IN DOUBLE-BARRIER RESONANT TUNNELING DEVICES [J].