Study on the Characteristics of ALD HfO2 Thin Film by using the High Pressure H-2 Annealing

We have investigated and tried to improve the characteristics of the thin HfO2 layer deposited by ALD for fabricating a MOSFET device where the HfO2 film worked as the gate dielectric. The substrate of MOSFET device is p-type (100) silicon wafer over which the HfO2 dielectric layer with thickness of 5 similar to 6 nm has been deposited. Then the HfO2 film was annealed with 1 similar to 20 atm H-2 gas and subsequently aluminum electrodes was made so that the active area was 5X10(-5) cm(2). We have found out that the drain current and transconductance increased by 5 similar to 10 % when the H-2 gas pressure was 20 atm, which significantly contributed to the reliable operation of the high-density MOSFET devices.