SEMICONDUCTOR-QUASIMETAL TRANSITION OF HEAVILY DOPED TRANS-POLYACETYLENE

被引：3
作者：
DINTER, M
机构：
来源：
PHYSICAL REVIEW B | 1989年 / 39卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.39.8423
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：8423 / 8434
页数：12
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