PHOTOCONDUCTIVITY OF GRADED-GAP CDXHG1-XTE

被引：5

作者：

PAWLIKOWSKI, JM ^{[1
]}

机构：

[1] POLYTECH INST WROCLAW,INST PHYS,PL-50370 WROCLAW,POLAND

来源：

INFRARED PHYSICS | 1979年 / 19卷 / 02期

关键词：

D O I：

10.1016/0020-0891(79)90024-1

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Photoconductivity measurements have been performed at 77 and 300 K in the 0.5-6 μm wave-range on samples cut from graded-gap epitaxial CdxHg1-xTe layers and compared with a simple theoretical model. The possible application of epitaxial graded-gap semiconductor layers as broad range photoconductive detectors is discussed. © 1979.

引用

页码：179 / 184

页数：6

共 14 条

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[2] CARRIER DISTRIBUTION IN GRADED-BAND-GAP SEMICONDUCTORS UNDER ASYMMETRIC BAND-EDGE GRADIENTS
CHATTOPADHYAYA, SK
MATHUR, VK
[J]. PHYSICAL REVIEW B, 1974, 9 (08) : 3517 - 3523
[3] TRANSPORT OF PHOTOCARRIERS IN CDXHG1-XTE GRADED-GAP STRUCTURES
COHENSOLAL, G
MARFAING, Y
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (12) : 1131 - +
[4] DORHAUS R, 1976, SOLID STATE PHYSICS, V78
[5] KASPRZAK JF, UNPUBLISHED
[6] Kroemer H., 1957, RCA REV, V18, P332
[7] PHOTOVOLTAIC EFFECTS IN GRADED BANDGAP STRUCTURES
MARFAING, Y
CHEVALLIER, J
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (08) : 465 - +
[8] Moss T. S., 1973, Journal of Luminescence, V7, P359, DOI 10.1016/0022-2313(73)90075-6
[9] CONDUCTIVITY AND HALL-COEFFICIENT OF GRADED-COMPOSITION EPITAXIAL CDXHG1-XTE LAYERS
PAWLIKOWSKI, JM
BECLA, P
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 32 (02): : 639 - 646
[10] PAWLIKOWSKI JM, 1976, ACTA PHYS POL A, V49, P563

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