BOUND EXCITONS AT DOUBLY IONIZABLE ACCEPTORS IN GASB

被引：32
作者：
NOACK, RA [1 ]
RUHLE, W [1 ]
MORGAN, TN [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
PHYSICAL REVIEW B | 1978年 / 18卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.18.6944
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：6944 / 6956
页数：13
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