AIGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR CIRCUITS WITH IMPROVED HIGH-SPEED PERFORMANCE

被引：24
作者：
CHANG, MF
ASBECK, PM
WANG, KC
SULLIVAN, GJ
MILLER, DL
机构：
来源：
ELECTRONICS LETTERS | 1986年 / 22卷 / 22期
关键词：
D O I：
10.1049/el:19860803
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1173 / 1174
页数：2
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CHANG MF, 1986, FEB WOCSMAD C SAN FR
[3]   GAAS-GAALAS HETEROJUNCTION TRANSISTOR FOR HIGH-FREQUENCY OPERATION [J].
DUMKE, WP ;
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SOLID-STATE ELECTRONICS, 1972, 15 (12) :1339-+
[4]   REDUCTION OF EXTRINSIC BASE RESISTANCE IN GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS AND CORRELATION WITH HIGH-FREQUENCY PERFORMANCE [J].
FISCHER, R ;
MORKOC, H .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (06) :359-362
[5]   HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].
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PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25
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