RANGE AND STANDARD DEVIATION OF ION-IMPLANTED PHOSPHORUS IN SILICON

被引：2
|
作者：
OKABAYASHI, H [1 ]
SHINODA, D [1 ]
机构：
[1] NIPPON ELECT CO LTD, CENT RES LABS, KAWASAKI, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1974年 / 13卷 / 07期
关键词：
D O I：
10.1143/JJAP.13.1187
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1187 / 1188
页数：2
相关论文
共 50 条
  • [1] RANGE AND STANDARD DEVIATION OF ION-IMPLANTED PHOSPHORUS AND BORON IN SILICON
    OKABAYASHI, H
    SHINODA, D
    NEC RESEARCH & DEVELOPMENT, 1974, (35): : 10 - 14
  • [2] RANGE AND STANDARD-DEVIATION OF ION-IMPLANTED SI IN GAAS
    ONUMA, T
    HIRAO, T
    SUGAWA, T
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) : 6128 - 6132
  • [3] DIFFUSION OF ION-IMPLANTED PHOSPHORUS IN SILICON
    CHELYADINSKII, AR
    TAHER, HIH
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1994, 142 (02): : 331 - 338
  • [4] CHANNELING AND DECHANNELING OF ION-IMPLANTED PHOSPHORUS IN SILICON
    REDDI, VGK
    SANSBURY, JD
    JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) : 2951 - 2963
  • [5] ASYMMETRICAL PROFILES OF ION-IMPLANTED PHOSPHORUS IN SILICON
    INOUE, K
    HIRAO, T
    YAEGASHI, Y
    TAKAYANAGI, S
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (02) : 367 - 372
  • [6] STUDY OF DEFECTS IN PHOSPHORUS ION-IMPLANTED SILICON.
    Shen, Hou-yun
    Pan, Xian-zheng
    Guo, Huai-xi
    Jian, Jin-chen
    Xi You Jin Shu/Rare Metals, 1986, 5 (02): : 105 - 108
  • [7] DAMAGE ANNEALING BEHAVIOR IN DIATOMIC PHOSPHORUS ION-IMPLANTED SILICON
    YANG, GQ
    KHANH, NQ
    FRIED, M
    KOTAI, E
    SCHILLER, V
    LU, LC
    GYULAI, J
    ZOU, SH
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1990, 115 (1-3): : 183 - 192
  • [8] REDISTRIBUTION OF PHOSPHORUS IN HIGH-ENERGY ION-IMPLANTED SILICON
    KATO, J
    YONENAGA, T
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (10) : 4311 - 4312
  • [9] ANALYSIS OF ARSENIC AND PHOSPHORUS ION-IMPLANTED SILICON BY SPECTROSCOPIC ELLIPSOMETRY
    CORTOT, JP
    GED, P
    APPLIED PHYSICS LETTERS, 1982, 41 (01) : 93 - 95
  • [10] AVOIDING END-OF-RANGE DISLOCATIONS IN ION-IMPLANTED SILICON
    ACCO, S
    CUSTER, JS
    SARIS, FW
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 34 (2-3): : 168 - 174
12345