DETECTION OF NEGATIVE-IONS IN A HELIUM-SILANE RF PLASMA

被引:29
作者
SHIRATANI, M
FUKUZAWA, T
ETO, K
WATANABE, Y
机构
[1] Department of Electrical Engineering, Kyushu University, Hakozaki, Fukuoka
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 12B期
关键词
NEGATIVE ION; DUST; PARTICLE; SILANE PLASMA; RF DISCHARGE; MICROWAVE INTERFEROMETER; AMORPHOUS SILICON; PLASMA CHEMICAL VAPOR DEPOSITION; PCVD; CVD;
D O I
10.1143/JJAP.31.L1791
中图分类号
O59 [应用物理学];
学科分类号
摘要
In order to detect negative ions in a helium-silane rf plasma, temporal evolutions of the densities of electrons and ions are observed by square-wave-amplitude modulation of an rf discharge voltage. Densities of electrons and ions are deducted using a microwave interferometer and ion saturation current of a Langmuir probe, respectively. The experiments show that negative ions are formed in the plasma even for a low concentration of 0.5% silane and their density is estimated mated to be about 10(9) cm-3 which is comparable to the electron density. The energy of electrons which form negative due to attachment is estimated to be below 8.9 eV, that is, below the resonance peak energy of dissociative electron attachment to SiH4.
引用
收藏
页码:L1791 / L1793
页数:3
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