ORIENTATION EFFECT ON PLANAR GAAS SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS

[1] LATERAL DIFFUSION OF ZINC AND TIN IN GALLIUM-ARSENIDE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (07) : 410 - 415

[2] ASYMMETRIC DEFORMATION OF GAAS SINGLE-CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) : 5435 - 5440

[3] PROSPECTS FOR ULTRAHIGH-SPEED VLSI GAAS DIGITAL LOGIC [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 221 - 239

[4] PLANAR GAAS IC TECHNOLOGY - APPLICATIONS FOR DIGITAL LSI [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) : 419 - 426

[5] EISEN FH, 1976, 5TH P INT C SEM OTH, P97

[6] Long S. I., 1979, 1979 IEEE MTT-S International Microwave Symposium Digest, P509

[7] ANISOTROPIC BENDING DURING EPITAXIAL-GROWTH OF MIXED-CRYSTALS ON GAAS SUBSTRATE [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) : 4254 - &

[8] OLESON GH, 1974, J ELECTROCHEM SOC, V121, P1650

[9] PREFERENTIAL ETCHING AND ETCHED PROFILE OF GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) : 118 - &

[10] Welch B. M., 1977, 1977 International Electron Devices Meeting, P205, DOI 10.1109/IEDM.1977.189206

[1] LATERAL DIFFUSION OF ZINC AND TIN IN GALLIUM-ARSENIDE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (07) : 410 - 415

[2] ASYMMETRIC DEFORMATION OF GAAS SINGLE-CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) : 5435 - 5440

[3] PROSPECTS FOR ULTRAHIGH-SPEED VLSI GAAS DIGITAL LOGIC [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 221 - 239

[4] PLANAR GAAS IC TECHNOLOGY - APPLICATIONS FOR DIGITAL LSI [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) : 419 - 426

[5] EISEN FH, 1976, 5TH P INT C SEM OTH, P97

[6] Long S. I., 1979, 1979 IEEE MTT-S International Microwave Symposium Digest, P509

[7] ANISOTROPIC BENDING DURING EPITAXIAL-GROWTH OF MIXED-CRYSTALS ON GAAS SUBSTRATE [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) : 4254 - &

[8] OLESON GH, 1974, J ELECTROCHEM SOC, V121, P1650

[9] PREFERENTIAL ETCHING AND ETCHED PROFILE OF GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) : 118 - &

[10] Welch B. M., 1977, 1977 International Electron Devices Meeting, P205, DOI 10.1109/IEDM.1977.189206