ORIENTATION EFFECT ON PLANAR GAAS SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS

被引：51

作者：

LEE, CP

ZUCCA, R

WELCH, BM

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 03期

关键词：

D O I：

10.1063/1.91917

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：311 / 313

页数：3

共 10 条

[1] LATERAL DIFFUSION OF ZINC AND TIN IN GALLIUM-ARSENIDE [J].

BALIGA, BJ ;

GHANDHI, SK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (07) :410-415

[2] ASYMMETRIC DEFORMATION OF GAAS SINGLE-CRYSTALS [J].

BOOYENS, H ;

VERMAAK, JS ;

PROTO, GR .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5435-5440

[3] PROSPECTS FOR ULTRAHIGH-SPEED VLSI GAAS DIGITAL LOGIC [J].

EDEN, RC ;

WELCH, BM ;

ZUCCA, R ;

LONG, SI .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :221-239

[4] PLANAR GAAS IC TECHNOLOGY - APPLICATIONS FOR DIGITAL LSI [J].

EDEN, RC ;

WELCH, BM ;

ZUCCA, R .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) :419-426

[5]

EISEN FH, 1976, 5TH P INT C SEM OTH, P97

[6]

Long S. I., 1979, 1979 IEEE MTT-S International Microwave Symposium Digest, P509

[7] ANISOTROPIC BENDING DURING EPITAXIAL-GROWTH OF MIXED-CRYSTALS ON GAAS SUBSTRATE [J].

NAGAI, H .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) :4254-&

[8]

OLESON GH, 1974, J ELECTROCHEM SOC, V121, P1650

[9] PREFERENTIAL ETCHING AND ETCHED PROFILE OF GAAS [J].

TARUI, Y ;

KOMIYA, Y ;

HARADA, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) :118-&

[10]

Welch B. M., 1977, 1977 International Electron Devices Meeting, P205, DOI 10.1109/IEDM.1977.189206

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