CONDUCTION-BAND DISCONTINUITY IN INGAP/GAAS MEASURED USING BOTH CURRENT-VOLTAGE AND PHOTOEMISSION METHODS

被引：47

作者：

LEE, TW

HOUSTON, PA

KUMAR, R

YANG, XF

HILL, G

HOPKINSON, M

CLAXTON, PA

机构：

[1] Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, Mappin Street

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 04期

关键词：

D O I：

10.1063/1.106639

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Both current-voltage and photoemission measurements of the conduction-band discontinuity of the same InGaP/GaAs p-n heterojunction have been carried out. Interpretation of the current-voltage results using thermionic emission theory applied to a heterojunction bipolar transistor have resulted in a conduction-band offset value of 0.21 eV in the case of a compositionally abrupt junction. This figure has been confirmed by performing independent photoemission measurements on the same junction.

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页码：474 / 476

页数：3

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