INVESTIGATION OF THE EARLY STAGES OF THIN-FILM GROWTH OF NI ON THERMALLY GROWN SIO2 BY MEANS OF RBS, AES AND TEM

被引：6
作者：
ANKLAM, HJ
MATTHEIS, R
THRUM, F
机构：
来源：
SURFACE AND INTERFACE ANALYSIS | 1989年 / 14卷 / 08期
关键词：
D O I：
10.1002/sia.740140802
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
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页码：433 / 437
页数：5
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