HETEROJUNCTION PHOTOTRANSISTORS FOR LONG-WAVELENGTH OPTICAL RECEIVERS

被引:60
作者
CAMPBELL, JC
OGAWA, K
机构
[1] Bell Laboratories, Crawford Hill Laboratory, Holmdel, NJ 07733, United States
关键词
D O I
10.1063/1.330570
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1203 / 1208
页数:6
相关论文
共 28 条
[1]  
Alavi K. T., 1981, P SOC PHOTO-OPT INS, V272, P38
[2]  
ALAVI KT, 1979, P INT ELECTRON DEVIC, P643
[3]  
ALFEROV ZI, 1973, SOV PHYS SEMICOND+, V7, P780
[4]   TUNNELING CURRENT IN INGAAS AND OPTIMUM DESIGN FOR INGAAS-INP AVALANCHE PHOTO-DIODE [J].
ANDO, H ;
KANBE, H ;
ITO, M ;
KANEDA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) :L277-L280
[5]   INGAAS-INP SEPARATED ABSORPTION AND MULTIPLICATION REGIONS AVALANCHE PHOTO-DIODE USING LIQUID-PHASE AND VAPOR-PHASE EPITAXIES [J].
ANDO, H ;
YAMAUCHI, Y ;
NAKAGOME, H ;
SUSA, N ;
KANBE, H .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :250-254
[6]   CHARACTERISTICS OF GERMANIUM AVALANCHE PHOTO-DIODES IN WAVELENGTH REGION OF 1-1.6 MU-M [J].
ANDO, H ;
KANBE, H ;
KIMURA, T ;
YAMAOKA, T ;
KANEDA, T .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (11) :804-809
[7]   HIGH-GAIN WIDE-GAP-EMITTER GA1-XALXAS-GAAS PHOTOTRANSISTOR [J].
BENEKING, H ;
MISCHEL, P ;
SCHUL, G .
ELECTRONICS LETTERS, 1976, 12 (16) :395-396
[8]   HIGH-SENSITIVITY INP-INGAAS HETEROJUNCTION PHOTO-TRANSISTOR [J].
CAMPBELL, JC ;
DENTAI, AG ;
BURRUS, CA ;
FERGUSON, JF .
ELECTRONICS LETTERS, 1980, 16 (18) :713-714
[9]  
CAMPBELL JC, 1981, IEEE J QUANTUM ELECT, V17, P264, DOI 10.1109/JQE.1981.1071072
[10]   SMALL-AREA HIGH-SPEED IN P-INGAAS PHOTO-TRANSISTOR [J].
CAMPBELL, JC ;
BURRUS, CA ;
DENTAI, AG ;
OGAWA, K .
APPLIED PHYSICS LETTERS, 1981, 39 (10) :820-821