STRUCTURAL AND ELECTRONIC TRANSPORT-PROPERTIES OF RESI2-DELTA SINGLE-CRYSTALS

被引:53
作者
GOTTLIEB, U
LAMBERTANDRON, B
NAVA, F
AFFRONTE, M
LABORDE, O
ROUAULT, A
MADAR, R
机构
[1] UNIV GRENOBLE 1,CTR RECH TRES BASSES TEMP,CNRS,F-38042 GRENOBLE 9,FRANCE
[2] UNIV GRENOBLE 1,CNRS,CRISTALLOG LAB,F-38042 GRENOBLE 9,FRANCE
[3] UNIV MODENA,DIPARTIMENTO FIS,I-41100 MODENA,ITALY
[4] LAB CHAMPS MAGNET INTENSES,CNRS,F-38042 GRENOBLE 9,FRANCE
关键词
D O I
10.1063/1.360707
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigated some structural and transport properties of semiconducting ReSi2-delta. In the Literature this silicides is reported to crystallize in an orthorhombic structure and to be stoichiometric ReSi2. Our investigations clearly show that the stable composition is ReSi1.75 crystallizing in the space group P1. Transport measurements show thermally activated behavior at high temperatures with one (or two) energy gap E(g) = 0.16 (0.30 eV). We also report Hall-effect measurements on this material: we found that R(H) is positive between 30 and 660 K and at room temperature the Hall number n(H) = 1/eR(H) is equal to 3.7 X 10(18) cm(-3). The Hall mobility at room temperature is relatively high (mu(H) = 370 cm(2)/V s) for a single crystal. (C) 1995 American Institute of Physics.
引用
收藏
页码:3902 / 3907
页数:6
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