THIN-FILM MANGANESE SILICIDES

被引：0
|
作者：
ZHANG, L
IVEY, DG
机构：
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1991年 / 117期
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D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Reactions between manganese thin films and silicon substrates have been studied. Four silicide phases are reported to form. Mn3Si, MnSi and Mn5Si3 form and grow in a layered manner at low annealing temperatures ( < 450-degrees-C). The three silicides are observed to co-exist and simultaneous growth of Mn5Si3 and MnSi takes place. This unusual growth behaviour is explained in terms of changes in diffusion fluxes during the annealing process. MnSi1.73 forms from MnSi at higher temperatures and the formation process is nucleation controlled.
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页码：319 / 322
页数：4
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