ZNSEXTE1-X FILMS GROWN BY PULSED LASER DEPOSITION

An XeCl excimer laser was used to grow thin polycrystalline films of the ternary alloy semiconductor, ZnSexTe1-x, on sodium-free glass substrates. The laser ablation/evaporation process has produced films spanning the entire compositional range with x values close to those of the original target. At a typical growth temperature of 300-degrees-C, the grains possess orientations which vary from a predominant <111> for ZnTe to <311> for ZnSe with an increasing fraction of <311> as the ZnSe fraction increases. X-ray diffraction shows that the alloy lattice constant increases linearly with the x value, absorption measurements show band bowing similar to that observed in bulk single crystals, and Raman studies show that the lattice dynamics are characteristic of single-vibrational-mode behavior over the entire alloy range.