SILICON FOR ELECTRONIC DEVICES

被引:17
作者
BRADSHAW, SE [1 ]
GOORISSEN, J [1 ]
机构
[1] PHILIPS GLOEILAMPENFABRIEKEN NV,PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
关键词
D O I
10.1016/0022-0248(80)90264-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:514 / 529
页数:16
相关论文
共 41 条
[1]  
ABE T, 1973, SEMICONDUCTOR SILICO, P95
[2]   SLIP IN SILICON EPITAXY [J].
BLOEM, J ;
GOEMANS, AH .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) :1281-&
[3]  
BLOEM J, 1978, CURRENT TOPICS MATER, V1, P147
[4]  
BOLLEN LJM, 1978, ACTA ELECTRON, V21, P185
[5]   THE DISTRIBUTION OF SOLUTE IN CRYSTALS GROWN FROM THE MELT .1. THEORETICAL [J].
BURTON, JA ;
PRIM, RC ;
SLICHTER, WP .
JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (11) :1987-1991
[6]   EFFECTS OF HEAT-TREATMENT ON DISLOCATION-FREE OXYGEN-CONTAINING SILICON-CRYSTALS [J].
CAPPER, P ;
JONES, AW ;
WALLHOUSE, EJ ;
WILKES, JG .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) :1646-1655
[7]   NONMIXING CELLS DUE TO CRUCIBLE ROTATION DURING CZOCHRALSKI CRYSTAL GROWTH [J].
CARRUTHERS, JR ;
NASSAU, K .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (11) :5205-+
[8]   ORIGINS OF CONVECTIVE TEMPERATURE OSCILLATIONS IN CRYSTAL-GROWTH MELTS [J].
CARRUTHERS, JR .
JOURNAL OF CRYSTAL GROWTH, 1976, 32 (01) :13-26
[9]   INHOMOGENEITIES DUE TO THERMOCAPILLARY FLOW IN FLOATING ZONE-MELTING [J].
CHANG, CE ;
WILCOX, WR .
JOURNAL OF CRYSTAL GROWTH, 1975, 28 (01) :8-12
[10]   FORMATION OF SWIRL DEFECTS IN SILICON BY AGGLOMERATION OF SELF-INTERSTITIALS [J].
FOLL, H ;
GOSELE, U ;
KOLBESEN, BO .
JOURNAL OF CRYSTAL GROWTH, 1977, 40 (01) :90-108