ANNEALING OF EPR-SIGNAL PRODUCED IN SILICON BY PLASTIC DEFORMATION

[1] ELECTRON SPIN RESONANCE IN DEFORMED SILICON [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (11) : 357 - 360

[2] Alexander H., 1969, SOLID STATE PHYS, V22, P27, DOI DOI 10.1016/S0081-1947(08)60031-4

[3] DISLOCATION DENSITY AND LOCAL SLIP IN GERMANIUM SINGLE CRYSTALS [J]. ACTA METALLURGICA, 1967, 15 (05): : 933 - +

[4] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J]. PHYSICAL REVIEW, 1966, 152 (02): : 761 - +

[5] CORBETT JW, 1966, SOLID STATE PHYS S7

[6] THEORY OF DIFFUSION-LIMITED PRECIPITATION [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (04) : 335 - 351

[7] STRESS-ASSISTED PRECIPITATION ON DISLOCATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (06) : 915 - 926

[8] PROPERTIES OF LOW-TEMPERATURE INTERNAL FRICTION PEAK IN SILICON [J]. PHYSICA STATUS SOLIDI, 1967, 21 (02): : 805 - +

[9] ON LOW-TEMPERATURE INTERNAL FRICTION IN SILICON [J]. PHYSICA STATUS SOLIDI, 1967, 21 (02): : 811 - &

[10] ELECTRICAL RESISTIVITY STUDY OF LATTICE DEFECTS INTRODUCED IN COPPER BY 1.25-MEV ELECTRON IRRADIATION AT 80-DEGREES-K [J]. PHYSICAL REVIEW, 1956, 103 (05): : 1193 - 1202

[1] ELECTRON SPIN RESONANCE IN DEFORMED SILICON [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (11) : 357 - 360

[2] Alexander H., 1969, SOLID STATE PHYS, V22, P27, DOI DOI 10.1016/S0081-1947(08)60031-4

[3] DISLOCATION DENSITY AND LOCAL SLIP IN GERMANIUM SINGLE CRYSTALS [J]. ACTA METALLURGICA, 1967, 15 (05): : 933 - +

[4] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J]. PHYSICAL REVIEW, 1966, 152 (02): : 761 - +

[5] CORBETT JW, 1966, SOLID STATE PHYS S7

[6] THEORY OF DIFFUSION-LIMITED PRECIPITATION [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (04) : 335 - 351

[7] STRESS-ASSISTED PRECIPITATION ON DISLOCATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (06) : 915 - 926

[8] PROPERTIES OF LOW-TEMPERATURE INTERNAL FRICTION PEAK IN SILICON [J]. PHYSICA STATUS SOLIDI, 1967, 21 (02): : 805 - +

[9] ON LOW-TEMPERATURE INTERNAL FRICTION IN SILICON [J]. PHYSICA STATUS SOLIDI, 1967, 21 (02): : 811 - &

[10] ELECTRICAL RESISTIVITY STUDY OF LATTICE DEFECTS INTRODUCED IN COPPER BY 1.25-MEV ELECTRON IRRADIATION AT 80-DEGREES-K [J]. PHYSICAL REVIEW, 1956, 103 (05): : 1193 - 1202