A FIELD-EFFECT QUANTUM-WELL LASER WITH LATERAL CURRENT INJECTION

被引:17
作者
AHN, D
CHUANG, SL
机构
关键词
D O I
10.1063/1.341214
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:440 / 442
页数:3
相关论文
共 16 条
[1]   VARIATIONAL CALCULATIONS OF SUBBANDS IN A QUANTUM-WELL WITH UNIFORM ELECTRIC-FIELD - GRAM-SCHMIDT ORTHOGONALIZATION APPROACH [J].
AHN, D ;
CHUANG, SL .
APPLIED PHYSICS LETTERS, 1986, 49 (21) :1450-1452
[2]  
AHN D, 1987, IEEE J QUANTUM ELECT, V23, P2196
[3]  
AHN DJ, UNPUB
[4]   ACTIVE Q-SWITCHING IN A GAAS/ALGAAS MULTIQUANTUM WELL LASER WITH AN INTRACAVITY MONOLITHIC LOSS MODULATOR [J].
ARAKAWA, Y ;
LARSSON, A ;
PASLASKI, J ;
YARIV, A .
APPLIED PHYSICS LETTERS, 1986, 48 (09) :561-563
[5]   GAIN AND INTERVALENCE BAND ABSORPTION IN QUANTUM-WELL LASERS [J].
ASADA, M ;
KAMEYAMA, A ;
SUEMATSU, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (07) :745-753
[6]   TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE LASER-DIODES [J].
CHIN, R ;
HOLONYAK, N ;
VOJAK, BA ;
HESS, K ;
DUPUIS, RD ;
DAPKUS, PD .
APPLIED PHYSICS LETTERS, 1980, 36 (01) :19-21
[7]   QUANTUM-WELL HETEROSTRUCTURE LASERS [J].
HOLONYAK, N ;
KOLBAS, RM ;
DUPUIS, RD ;
DAPKUS, PD .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :170-186
[8]   DYNAMIC BEHAVIOR OF A GAAS-ALGAAS MQW LASER DIODE [J].
IWAMURA, H ;
SAKU, T ;
ISHIBASHI, T ;
OTSUKA, K ;
HORIKOSHI, Y .
ELECTRONICS LETTERS, 1983, 19 (05) :180-181
[9]   BAND STRUCTURE OF INDIUM ANTIMONIDE [J].
KANE, EO .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) :249-261
[10]  
MAKIUCHI M, 1987, UNPUB C LASERS ELECT