THEORY OF GUNN-EFFECT LOGIC

被引：46
作者：
HARTNAGEL, HL
机构：
[1] Department of Electronic and Electrical Engineering, University of Sheffield, England
来源：
SOLID-STATE ELECTRONICS | 1969年 / 12卷 / 01期
关键词：
D O I：
10.1016/0038-1101(69)90132-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A range of important aspects of Gunn-effect pulse-processing devices has been studied. Appreciable pulse gain can be obtained for correctly chosen diode parameters. Equally, the pulse coincidence does not have to be unreasonably large for high-grain diodes. A fan-out of more than 7 should be obtainable for diode resistivities larger than 10 Ω-cm. The power dissipation can easily be kept below 100 mW for gains up to more than 50 db. The three-terminal Gunn-effect comparator has been treated and the conditions for successful operation are given. Finally, a new comparator circuit has been proposed consisting of two two-electrode devices operating on one common load resistor. © 1969.
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页码：19 / +
页数：1
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