Recent advances in optoelectronic properties and applications of two-dimensional metal chalcogenides

被引:91
作者
Xia Congxin [1 ]
Li Jingbo [2 ]
机构
[1] Henan Normal Univ, Dept Phys, Xinxiang 453007, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
关键词
2D metal chalcogenides; semiconductor; optoelectronic applications;
D O I
10.1088/1674-4926/37/5/051001
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Since two-dimensional (2D) graphene was fabricated successfully, many kinds of graphene-like 2D materials have attracted extensive attention. Among them, the studies of 2D metal chalcogenides have become the focus of intense research due to their unique physical properties and promising applications. Here, we review significant recent advances in optoelectronic properties and applications of 2D metal chalcogenides. This review highlights the recent progress of synthesis, characterization and isolation of single and few layer metal chalcogenides nanosheets. Moreover, we also focus on the recent important progress of electronic, optical properties and optoelectronic devices of 2D metal chalcogenides. Additionally, the theoretical model and understanding on the band structures, optical properties and related physical mechanism are also reviewed. Finally, we give some personal perspectives on potential research problems in the optoelectronic characteristics of 2D metal chalcogenides and related device applications.
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页数:9
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