N+-INP GROWTH ON INGAAS BY LIQUID-PHASE EPITAXY

被引：18

作者：

GROVES, SH

PLONKO, MC

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 12期

关键词：

D O I：

10.1063/1.92245

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1003 / 1004

页数：2

共 12 条

[1] PREVENTION OF INP SURFACE DECOMPOSITION IN LIQUID-PHASE EPITAXIAL-GROWTH [J].

ANTYPAS, GA .

APPLIED PHYSICS LETTERS, 1980, 37 (01) :64-65

[2] INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH [J].

ASTLES, MG ;

SMITH, FGH ;

WILLIAMS, EW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) :1750-1757

[3] SOLUBILITIES OF INP AND CDS IN CD, SN, IN, BI AND PB [J].

BUEHLER, E ;

BACHMANN, KJ .

JOURNAL OF CRYSTAL GROWTH, 1976, 35 (01) :60-64

[4] INTERFACE GRADING IN INGAASP LIQUID-PHASE EPITAXIAL HETEROSTRUCTURES [J].

COOK, LW ;

FENG, M ;

TASHIMA, MM ;

BLATTNER, RJ ;

STILLMAN, GE .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :173-175

[5] AVALANCHE MULTIPLICATION AND NOISE CHARACTERISTICS OF LOW-DARK-CURRENT GAINASP-INP AVALANCHE PHOTODETECTORS [J].

DIADIUK, V ;

GROVES, SH ;

HURWITZ, CE .

APPLIED PHYSICS LETTERS, 1980, 37 (09) :807-810

[6] HIGH-TEMPERATURE CW OPERATION OF GAINASP-INP LASERS EMITTING AT 1.5 MU-M [J].

HSIEH, JJ .

APPLIED PHYSICS LETTERS, 1980, 37 (01) :25-27

[7]

HSIEH JJ, 1976, I PHYS C SER B, V33, P74

[8] PHASE-DIAGRAMS OF COMPOUND SEMICONDUCTORS .4. SOLUBILITIES OF AIIIBV - COMPOUNDS IN METALS [J].

LEONHARD.A ;

KUHN, G .

JOURNAL OF THE LESS-COMMON METALS, 1974, 37 (02) :310-312

[9] LATTICE SUPERDILATION PHENOMENA IN DOPED GAAS [J].

MULLIN, JB ;

STRAUGHAN, BW ;

DRISCOLL, CMH ;

WILLOUGHBY, AFW .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2584-2587

[10]

QUILLEC M, UNPUBLISHED

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