SURFACE RECOMBINATION IN DRY ETCHED ALGAAS/GAAS DOUBLE HETEROSTRUCTURE P-I-N MESA DIODES

被引：31

作者：

CORBETT, B

KELLY, WM

机构：

[1] National Microelectronics Research Center, University College, Lee Maltings, Prospect Row, Cork

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 01期

关键词：

D O I：

10.1063/1.108781

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured the surface recombination in reactive ion etched mesas in an AlGaAs/Ga p-i-n double heterostructure using the size dependence of the current density versus voltage characteristic. The recombination current is dependent on processing due to surface oxide formation. The surface recombination of the oxidized surface is independent of the crystal axis. The recombination current can be reduced by removal of the oxide and sulfur passivation which protects the surface from further oxidation.

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页码：87 / 89

页数：3

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