FAST RADIATIONLESS RECOMBINATION IN AMORPHOUS SILICON

被引：30

作者：

REHM, W

FISCHER, R

机构：

[1] Fachbereäch Physik, Universität Marburg

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1979年 / 94卷 / 02期

关键词：

D O I：

10.1002/pssb.2220940231

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The luminescence of armorphous silicon is excited by intense dye laser pulses of different energies. The variation of luminescence intensity with excitation intensity follows a square‐root law at high intensities. This indicates that here the recombination kinetics is governed by a bimolecular non‐radiative recombination process. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

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页码：595 / 602

页数：8

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