EFFECT OF HEAT-TREATMENT ON RESIDUAL-STRESS AND ELECTRON HALL-MOBILITY OF LASER ANNEALED SILICON-ON-SAPPHIRE

被引：23
作者：
KOBAYASHI, Y
NAKAMURA, M
SUZUKI, T
机构：
来源：
APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 12期
关键词：
D O I：
10.1063/1.92988
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1040 / 1042
页数：3
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