DIFFERENTIAL CAPACITANCE OF N-TYPE AND P-TYPE GALLIUM-ARSENIDE ELECTRODE

被引：65
作者：
LAFLERE, WH [1 ]
CARDON, F [1 ]
GOMES, WP [1 ]
机构：
[1] RIJKS UNIV GHENT,LAB KRISTALLOG STUDIE VASTE STOF,KRIJGSLAAN 271,B 9000 GHENT,BELGIUM
来源：
SURFACE SCIENCE | 1974年 / 44卷 / 02期
关键词：
D O I：
10.1016/0039-6028(74)90136-8
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：541 / 552
页数：12
相关论文
共 23 条
[1]   HOLE INJECTION AND SURFACE STATE EFFECTS AT GALLIUM-ARSENIDE ELECTRODES [J].
BENARD, DJ ;
HANDLER, P .
SURFACE SCIENCE, 1973, 40 (01) :141-148
[2]  
BIRINTSEVA TP, 1965, IAN SSSR KH, P251
[3]   HYDROGEN EVOLUTION ON SINGLE CRYSTAL GAAS ELECTRODES [J].
BRUMMER, KDN .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (12) :1274-&
[4]  
EFIMOV EA, 1965, ELEKTROKHIMIYA, V1, P818
[5]  
Fujishima A, 1969, SEISAN KENKYU, V21, P450
[6]   MECHANISM FOR ELECTRON TRANSFER AND CORROSION ON CADMIUM SULFIDE ELECTRODE IN REDOX SYSTEM I3(-)/I- [J].
GERISCHER, H ;
MEYER, E .
ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-FRANKFURT, 1971, 74 (3-6) :302-+
[7]   WASSERSTOFFABSCHEIDUNG UND ABLAUF VON REDOXREAKTIONEN AN GALLIUMARSENID [J].
GERISCHER, H ;
MATTES, I .
ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-FRANKFURT, 1966, 49 (1-2) :112-+
[8]   UBER DIE MITWIRKUNG VON OBERFLACHENZUSTANDEN BEI REDOXREAKTIONEN AN HALBLEITERN [J].
GERISCHER, H ;
MATTES, I .
ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-FRANKFURT, 1967, 52 (1-4) :60-+
[9]  
GOOCH CH, 1969, GALLIUM ARSENIDE LAS
[10]   GALLIUM ARSENIDE ELECTRODE BEHAVIOR [J].
HARVEY, WW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (05) :472-&
123