SHORT-TERM ANNEALING IN SILICON DEVICES FOLLOWING PULSED 14-MEV NEUTRON-IRRADIATION

被引：20

作者：

SROUR, JR ^{[1
]}

CURTIS, OL ^{[1
]}

机构：

[1] NORTHROP CORP LABS, HOWTHORNE, CA 90250 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1972年 / NS19卷 / 06期

关键词：

D O I：

10.1109/TNS.1972.4326859

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：362 / 370

页数：9

共 50 条

[1] SHORT-TERM ANNEALING IN 14-MEV NEUTRON-IRRADIATED SILICON
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[9] DIFFUSION OF GOLD IN SILICON UNDER NEUTRON-IRRADIATION PULSED AND STATIONARY ANNEALING
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[10] TRANSIENT ANNEALING IN SEMICONDUCTOR DEVICES FOLLOWING PULSED NEUTRON IRRADIATION
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