ROLE OF ATOMIC TELLURIUM IN THE GROWTH-KINETICS OF CDTE (111) HOMOEPITAXY

被引：23

作者：

CHEUNG, JT

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 23期

关键词：

D O I：

10.1063/1.98307

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1940 / 1942

页数：3

共 11 条

[1] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J].

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1981, 38 (09) :701-703

[2] HGTE AND CDTE EPITAXIAL LAYERS AND HGTE-CDTE SUPERLATTICES GROWN BY LASER MOLECULAR-BEAM EPITAXY [J].

CHEUNG, JT ;

NIIZAWA, G ;

MOYLE, J ;

ONG, NP ;

PAINE, BM ;

VREELAND, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04) :2086-2090

[3] GROWTH OF HGCDTE EPILAYERS WITH ANY PREDESIGNED COMPOSITIONAL PROFILE BY LASER MOLECULAR-BEAM EPITAXY [J].

CHEUNG, JT ;

MADDEN, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03) :705-708

[4]

CHEUNG JT, 1986, MATER RES SOC S P, V56, P85

[5]

CHEUNG JT, 1984, MATER RES SOC S P, V29, P301

[6] GROWTH OF LOW DISLOCATION DENSITY CDTE-FILMS ON HYDROPLANED CDTE SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

MYERS, TH ;

SCHETZINA, JF ;

MAGEE, TJ ;

ORMOND, RD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1598-1603

[7] CORRELATION BETWEEN ELECTRON TRAPS AND GROWTH-PROCESSES IN N-GAAS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

NEAVE, JH ;

BLOOD, P ;

JOYCE, BA .

APPLIED PHYSICS LETTERS, 1980, 36 (04) :311-312

[8] THERMAL AND PULSED LASER EVAPORATION OF SINGLE-PHASE ASXP1-X ALLOYS [J].

SCHWARTZ, GP ;

BONDYBEY, VE ;

ENGLISH, JH ;

GUALTIERI, GJ .

APPLIED PHYSICS LETTERS, 1983, 42 (11) :952-954

[9] ROLE OF ARSENIC (AS2 AS) IN CONTROLLING THE QUALITY OF GAAS GROWN BY MBE - THEORETICAL-STUDIES [J].

SINGH, J ;

BAJAJ, KK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02) :276-279

[10] RELATION BETWEEN CRYSTALLOGRAPHIC ORIENTATION AND THE CONDENSATION COEFFICIENTS OF HG, CD, AND TE DURING MOLECULAR-BEAM-EPITAXIAL GROWTH OF HG1-XCDXTE AND CDTE [J].

SIVANANTHAN, S ;

CHU, X ;

RENO, J ;

FAURIE, JP .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (04) :1359-1363

← 1 2 →