ION IMPLANTATION OF SILICON AND GERMANIUM AT ROOM TEMPERATURE . ANALYSIS BY MEANS OF 1.0-MEV HELIUM ION SCATTERING

被引：209
作者：
MAYER, JW
ERIKSSON, L
PICRAUX, ST
DAVIES, JA
机构：
来源：
CANADIAN JOURNAL OF PHYSICS | 1968年 / 46卷 / 06期
关键词：
D O I：
10.1139/p68-082
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：663 / &
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