GAN CORE RELAXATION EFFECTS AND THEIR RAMIFICATIONS FOR P-TYPE DOPING

被引：34

作者：

STRITE, S

机构：

[1] IBM Research Division, Zurich Research Laboratory, Riischlikon

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 5B期

关键词：

GAN; P-TYPE DOPING; BAND STRUCTURE; SEMICONDUCTOR; WIDE BANDGAP SEMICONDUCTOR; D-ELECTRONS; GAN-C; CA; MG;

D O I：

10.1143/JJAP.33.L699

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Evidence for the presence of d-electron core relaxation effects in GaN and InN is examined by comparing the physical properties of these materials with those of AlN and the group III arsenides and phosphides. The comparison strongly suggests that d-electron core relaxation effects play an important role in the properties of the III-V nitride semiconductors. Based on these observations, it is proposed that Ca and C be investigated as dopants potentially superior to Mg for p-type doping of GaN.

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收藏

页码：L699 / L701

页数：3

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