共 21 条
[1]
EVALUATION OF THE SURFACE CONCENTRATION OF DIFFUSED LAYERS IN SILICON
[J].
BELL SYSTEM TECHNICAL JOURNAL,
1958, 37 (03)
:699-710
[2]
TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING
[J].
PHYSICAL REVIEW,
1956, 101 (03)
:944-961
[3]
KEYES RW, 1960, SOLID STATE PHYSICS, V11
[5]
EFFECT OF PRESSURE ON THE ELECTRICAL PROPERTIES OF INDIUM ANTIMONIDE
[J].
PHYSICAL REVIEW,
1955, 99 (02)
:388-390
[7]
MASON WP, 1960, ISNY60 PREPR
[8]
ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON
[J].
PHYSICAL REVIEW,
1954, 96 (01)
:28-35
[9]
TEMPERATURE DEPENDENCE OF THE PIEZORESISTANCE OF HIGH-PURITY SILICON AND GERMANIUM
[J].
PHYSICAL REVIEW,
1957, 105 (02)
:525-539
[10]
ELECTRICAL PROPERTIES OF PURE SILICON AND SILICON ALLOYS CONTAINING BORON AND PHOSPHORUS
[J].
PHYSICAL REVIEW,
1949, 75 (05)
:865-883