PIEZORESISTIVE PROPERTIES OF SILICON DIFFUSED LAYERS

被引:258
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TUFTE, ON
STELZER, EL
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10.1063/1.1702605
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O59 [应用物理学];
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页码:313 / &
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[1]   EVALUATION OF THE SURFACE CONCENTRATION OF DIFFUSED LAYERS IN SILICON [J].
BACKENSTOSS, G .
BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (03) :699-710
[2]   TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING [J].
HERRING, C ;
VOGT, E .
PHYSICAL REVIEW, 1956, 101 (03) :944-961
[3]  
KEYES RW, 1960, SOLID STATE PHYSICS, V11
[4]   STRESS DEPENDENCE OF PIEZORESISTANCE EFFECT [J].
LONG, D .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (10) :2050-&
[5]   EFFECT OF PRESSURE ON THE ELECTRICAL PROPERTIES OF INDIUM ANTIMONIDE [J].
LONG, D .
PHYSICAL REVIEW, 1955, 99 (02) :388-390
[6]   USE OF PIEZORESISTIVE MATERIALS IN THE MEASUREMENT OF DISPLACEMENT, FORCE, AND TORQUE [J].
MASON, WP ;
THURSTON, RN .
JOURNAL OF THE ACOUSTICAL SOCIETY OF AMERICA, 1957, 29 (10) :1096-1101
[7]  
MASON WP, 1960, ISNY60 PREPR
[8]   ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J].
MORIN, FJ ;
MAITA, JP .
PHYSICAL REVIEW, 1954, 96 (01) :28-35
[9]   TEMPERATURE DEPENDENCE OF THE PIEZORESISTANCE OF HIGH-PURITY SILICON AND GERMANIUM [J].
MORIN, FJ ;
GEBALLE, TH ;
HERRING, C .
PHYSICAL REVIEW, 1957, 105 (02) :525-539
[10]   ELECTRICAL PROPERTIES OF PURE SILICON AND SILICON ALLOYS CONTAINING BORON AND PHOSPHORUS [J].
PEARSON, GL ;
BARDEEN, J .
PHYSICAL REVIEW, 1949, 75 (05) :865-883