COMPARISON OF ZNS THIN-FILMS GROWN BY ATOMIC LAYER EPITAXY FROM ZINC ACETATE AND ZINC-CHLORIDE - AN X-RAY-DIFFRACTION AND SPECTROSCOPIC ELLIPSOMETRIC STUDY

被引:20
作者
OIKKONEN, M [1 ]
TAMMENMAA, M [1 ]
ASPLUND, M [1 ]
机构
[1] HELSINKI UNIV TECHNOL,DEPT CHEM,SF-02150 ESPOO 15,FINLAND
关键词
D O I
10.1016/0025-5408(88)90235-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:133 / 142
页数:10
相关论文
共 17 条
[2]   ATOMIC LAYER EPITAXY [J].
GOODMAN, CHL ;
PESSA, MV .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) :R65-R81
[3]   EFFECT OF GROWTH TEMPERATURE ON THE ELECTRONIC-ENERGY BAND AND CRYSTAL-STRUCTURE OF ZNS THIN-FILMS GROWN USING ATOMIC LAYER EPITAXY [J].
LAHTINEN, JA ;
LU, A ;
TUOMI, T ;
TAMMENMAA, M .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (05) :1851-1853
[4]  
LI HH, 1984, J PHYS CHEM REF DATA, V12, P103
[5]   MEASUREMEMT OF THICKNESS AND REFRACTIVE INDEX OF VERY THIN FILMS AND OPTICAL PROPERTIES OF SURFACES BY ELLIPSOMETRY [J].
MCCRACKIN, FL ;
PASSAGLIA, E ;
STROMBERG, RR ;
STEINBERG, HL .
JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS SECTION A-PHYSICS AND CHEMISTRY, 1963, A 67 (04) :363-+
[6]   X-RAY-DIFFRACTION STUDY OF MICROSTRUCTURE IN ZNS THIN-FILMS GROWN FROM ZINC ACETATE BY ATOMIC LAYER EPITAXY [J].
OIKKONEN, M ;
BLOMBERG, M ;
TUOMI, T ;
TAMMENMAA, M .
THIN SOLID FILMS, 1985, 124 (3-4) :317-321
[7]  
OIKKONEN M, IN PRESS J APPL PHYS
[8]  
SUNTOLA T, 1980, SOC INFORMATION DISP, P109
[9]  
Suntola T, 1977, U.S. Patent, Patent No. [4058430, 4,058,430]
[10]  
Suntola T., 1974, patent FIN, Patent No. 52359