THE EFFECTS OF HOT ION-IMPLANTATION ON THE ELECTRICAL-PROPERTIES OF AMORPHOUS-SILICON FILMS PRODUCED BY CHEMICAL-VAPOR-DEPOSITION METHOD

被引：6
|
作者：
SATOH, T
KANOH, H
SUGIURA, O
MATSUMURA, M
机构：
[1] Department of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 12B期
关键词：
AMORPHOUS-SILICON; ION-IMPLANTATION; CHEMICAL-VAPOR-DEPOSITION; CONDUCTIVITY; DI-SILANE;
D O I：
10.1143/JJAP.30.L2077
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Hot ion-implantation into amorphous silicon (a-Si) has been studied for chemical-vapor-deposited films. Conductivity of as high as 0.4 S/cm (100 times higher than the previous result) was achieved at the phosphorus atom concentration of 8 x 10(20) cm-3, when the substrate temperature was elevated up to 450-degrees-C during the ion-implantation. Activation energy was 0.12 eV.
引用
收藏
页码：L2077 / L2079
页数：3
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