PHOTOLUMINESCENCE LINE-SHAPE DUE TO ARRAYED STEPS AT THE INTERFACES OF GAAS/ALGAAS SINGLE QUANTUM WELLS GROWN ON VICINAL SURFACES BY MOLECULAR-BEAM EPITAXY

被引：3
作者：
KANAMOTO, K
FUJIWARA, K
TOKUDA, Y
TSUKADA, N
ISHII, M
NAKAYAMA, T
机构：
[1] Central Research Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo, 661
来源：
APPLIED SURFACE SCIENCE | 1989年 / 41-2卷
关键词：
D O I：
10.1016/0169-4332(89)90115-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Systematic variations in excitonic photoluminescence spectral features were observed for growth-interrupted GaAs/AlGaAs SQW's on GaAs(100) vicinal substrates for a variation in the misorientation angle (toward the (111)A) from 0.5° to 4.0°. These were explained by a structural model of hetero-interfaces composed of staircases which have monolayer straight steps and terraces with a fluctuating width characteristic of the angles. An analysis, which includes the effect of the fluctuation in terrace widths relative to the exciton size is given to explain the observed narrowing of the luminescence linewidth for the highest misorientation angle examined. © 1989.
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页码：526 / 529
页数：4
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