SPATIALLY RESOLVED PHOTOLUMINESCENCE CHARACTERIZATION OF FE DOPED SEMI-INSULATING INP

被引:0
作者
ERMAN, M
GILLARDIN, G
LEBRIS, J
RENAUD, M
TOMZIG, E
机构
来源
FIRST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS FOR ADVANCED ELECTRONIC AND OPTICAL DEVICES | 1989年 / 1144卷
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:78 / 85
页数:8
相关论文
共 50 条
[41]   Influence of Fe doping concentration on some properties of semi-insulating InP [J].
Zhao, Youwen ;
Luo, Yilin ;
Fung, S. ;
Beling, C.D. ;
Lin, Lanying .
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2002, 23 (10) :1041-1045
[42]   CHROMIUM-DOPED P-TYPE SEMI-INSULATING INP [J].
TOUDIC, Y ;
LAMBERT, B ;
COQUILLE, R ;
GRANDPIERRE, G ;
GAUNEAU, M .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (05) :464-468
[43]   Optical properties of semi-insulating InP:Fe irradiated by fast neutrons [J].
Mudron, J ;
Müllerová, J ;
Dubecky, F ;
Huran, J .
ASDAM'98, SECOND INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, CONFERENCE PROCEEDINGS, 1998, :235-238
[44]   REDISTRIBUTION OF FE IN THERMALLY ANNEALED SEMI-INSULATING INP(FE) - DETERMINATION OF FE DIFFUSION-COEFFICIENT IN INP [J].
KAMADA, H ;
SHINOYAMA, S ;
KATSUI, A .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :2881-2884
[45]   Model for trap filling and avalanche breakdown in semi-insulating Fe:InP [J].
Corvini, PJ ;
Bowers, JE .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (01) :259-269
[46]   SEMI-INSULATING PROPERTIES OF FE-DOPED INP GROWN BY HYDRIDE VAPOR-PHASE EPITAXY [J].
IYER, S ;
MACRANDER, AT ;
KARLICEK, RF ;
LAU, S .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (12) :5880-5884
[47]   Uniformity and physical properties of semi-insulating Fe-doped InP after wafer or ingot annealing [J].
Avella, M ;
Jimenez, J ;
Alvarez, A ;
Fornari, R ;
Gilioli, E ;
Sentiri, A .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (08) :3836-3845
[48]   Thermally stimulated current study of electron-irradiated semi-insulating Fe-doped InP [J].
Kuriyama, K ;
Sakai, K ;
Ushiyama, K ;
Okada, M ;
Yokoyama, K .
SOLID STATE COMMUNICATIONS, 1996, 100 (06) :389-392
[49]   Thermally stimulated current study of electron-irradiated semi-insulating Fe-doped InP [J].
Hosei Univ, Tokyo, Japan .
Solid State Commun, 6 (389-392)
[50]   Characterization of resistivity and breakdown field in Fe-doped semi-insulating GaN substrates [J].
Aoai, A. ;
Suzuki, K. ;
Asubar, J. T. ;
Tokuda, H. ;
Nojima, K. ;
Ishibashi, N. ;
Okada, N. ;
Tadatomo, K. ;
Kuzuhara, M. .
2018 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK), 2018,