SPATIALLY RESOLVED PHOTOLUMINESCENCE CHARACTERIZATION OF FE DOPED SEMI-INSULATING INP

被引:0
|
作者
ERMAN, M
GILLARDIN, G
LEBRIS, J
RENAUD, M
TOMZIG, E
机构
来源
FIRST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS FOR ADVANCED ELECTRONIC AND OPTICAL DEVICES | 1989年 / 1144卷
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:78 / 85
页数:8
相关论文
共 50 条
  • [11] Characterization of freestanding semi-insulating Fe-doped GaN by photoluminescence and electromodulation spectroscopy
    Dumcenco, D. O.
    Levcenco, S.
    Huang, Y. S.
    Reynolds, C. L., Jr.
    Reynolds, J. G.
    Tiong, K. K.
    Paskova, T.
    Evans, K. R.
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (12)
  • [12] Growth of Fe doped semi-insulating InP by LP-MOCVD
    Yan, XJ
    Zhu, HL
    Wang, W
    Xu, GY
    Zhou, F
    Ma, CH
    Wang, XJ
    Tian, HL
    Zhang, JY
    Wu, RH
    Wang, QM
    INTEGRATED OPTOELECTRONICS II, 1998, 3551 : 80 - 83
  • [13] SEMI-INSULATING FE-DOPED INP LAYERS GROWN BY MOVPE
    SPEIER, P
    WIEDEMANN, P
    KUEBART, W
    GROSSKOPF, H
    GROTJAHN, F
    SCHULER, F
    TEGUDE, FJ
    WUNSTEL, K
    SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 295 - 300
  • [14] THERMAL DONOR FORMATION IN FE-DOPED SEMI-INSULATING INP
    VONBARDELEBEN, HJ
    BOURGOIN, JC
    KAINOSHO, K
    ODA, O
    APPLIED PHYSICS LETTERS, 1990, 57 (23) : 2464 - 2465
  • [15] Non-contacting spatially resolved measurements of Fermi energy and photoconductivity in semi-insulating undoped GaAs and InP:Fe
    UMIST, Manchester, United Kingdom
    Mater Sci Eng B Solid State Adv Technol, 1-3 (203-207):
  • [16] Non-contacting spatially resolved measurements of Fermi energy and photoconductivity in semi-insulating undoped GaAs and InP:Fe
    Young, SM
    Brozel, MR
    Moore, CJL
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 44 (1-3): : 203 - 207
  • [17] Production of semi-insulating layers in n-doped InP by Fe implantation
    1600, American Inst of Physics, Woodbury, NY, USA (76):
  • [18] Electron-irradiation induced defects in Fe - Doped semi-insulating InP
    Kuriyama, K
    Sakai, K
    Kato, T
    Iijima, T
    Okada, M
    Yokoyama, K
    ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 1443 - 1447
  • [19] ON THE THERMAL EVOLUTION OF PHOTOCONDUCTIVITY IN BULK FE-DOPED SEMI-INSULATING INP
    JIMENEZ, J
    GONZALEZ, MA
    CARBAYO, V
    BONNAFE, J
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 77 (01): : K69 - K73
  • [20] PHOTOLUMINESCENCE FOR CHARACTERIZATION OF COMMERCIAL SEMI-INSULATING GAAS
    MACIASZEK, M
    ROGERS, DW
    BULT, RP
    STEINER, T
    ZHANG, Y
    CHARBONNEAU, S
    THEWALT, MLW
    CANADIAN JOURNAL OF PHYSICS, 1989, 67 (04) : 384 - 388