CARRIER-INDUCED REFRACTIVE-INDEX CHANGE, MODE GAIN AND SPONTANEOUS-EMISSION FACTOR IN ALGALNP SQW-SCH LASER-DIODES

被引：5
作者：
TANAKA, T
MINAGAWA, S
机构：
[1] Central Research Laboratory, Hitachi Ltd., Tokyo 185, 1-280 Higashikoigakubo, Kokubunji
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 11期
关键词：
Lasers and laser applications; Quantum optics; Semiconductor lasers;
D O I：
10.1049/el:19900501
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The carrier-induced refractive-index change, mode gain and spontaneous emission factor are evaluated for AIGalnP single-quantum-well laser diodes with separate-confinement heterostructures. The results are compared with those of AIGalnP double-heterostructure lasers. The values of the a parameter, defined as the ratio of the real part of the refractive index to the imaginary part of the refractive index, are estimated as 4.9 and 12.8. © 1990, The Institution of Electrical Engineers. All rights reserved.
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页码：766 / 767
页数：2
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