MONOLITHICALLY INTEGRATED INGAAS PIN-INP JFET AMPLIFIER WITH HIGH-SENSITIVITY

被引：1
|
作者：
KIM, SJ [1 ]
GUTH, G [1 ]
VELLACOLEIRO, GP [1 ]
SEABURY, CW [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 12期
关键词：
Work supported by the U.S. Army Research Office under Contract DAAL-03-87-K-0007. [I] 0. Wada; T; Sakurai; and T. Nakagami; IEEE J. Quantum Electron; VOI.Q E-22; 1986; 2; D; Wake; E; G; Scott; and; 1; Henning; Electron; Lett; vol; 22; p; 719; 1986. 131 W. A. Hughes and D. Parker; 509;
D O I：
10.1109/16.8845
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
1
引用
收藏
页码：2434 / 2435
页数：2
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