7-MU-M-CUTOFF PTSI INFRARED DETECTOR FOR HIGH-SENSITIVITY MWIR APPLICATIONS

被引：17

作者：

LIN, TL ^{[1
]}

GUNAPALA, SD ^{[1
]}

JONES, EW ^{[1
]}

DELCASTILLO, HM ^{[1
]}

WEEKS, MM ^{[1
]}

PELLEGRINI, PW ^{[1
]}

机构：

[1] ROME LAB,BEDFORD,MA 01731

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 03期

关键词：

D O I：

10.1109/55.363236

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

PtSi Schottky Infrared detectors with extended cut-off wavelengths of 5.7, 6.6, and 7.3 mum have been demonstrated by incorporating a thin p+ layer at the PtSi/Si interface for high sensitivity medium wavelength infrared imaging applications. The response uniformity of the 7-mum cutoff detector was studied.

引用

页码：94 / 96

页数：3

共 6 条

[1]

KIMATA M, 1992, P SPIE, V1762

[2] LONG-WAVELENGTH PTSI INFRARED DETECTORS FABRICATED BY INCORPORATING A P+ DOPING SPIKE GROWN BY MOLECULAR-BEAM EPITAXY [J].

LIN, TL ;

PARK, JS ;

GEORGE, T ;

JONES, EW ;

FATHAUER, RW ;

MASERJIAN, J .

APPLIED PHYSICS LETTERS, 1993, 62 (25) :3318-3320

[3] EXCESS LOW-FREQUENCY NOISE IN PTSI ON P-TYPE SI SCHOTTKY DIODES [J].

MOONEY, JM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (01) :160-166

[4]

SHEPHERD FD, 1992, P SOC PHOTO-OPT INS, V1735, P250, DOI 10.1117/12.138629

[5]

SHEPHERD FD, 1992, M IRIS SPECIALTY GRO, V1, P333

[6]

SZE SM, 1981, PHYSICS SEMICONDUCTO, pCH5

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