MAGNETORESISTANCE OF N-TYPE BI2TE3

被引：2
作者：
ASHWORTH, HA
RAYNE, JA
URE, RW
机构：
[1] Carnegie-Mellon University, Pittsburgh
[2] Westinghouse Research and Development Center, Pittsburgh
来源：
PHYSICS LETTERS A | 1969年 / A 30卷 / 04期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/0375-9601(69)90872-X
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The magnetoresistance of n-type Bi2Te3 with carrier concentrations ranging from 2 × 1017 to 2 × 1019 cm-3 has been measured at 77°K and 4.2°K. The data provide direct evidence for the existence of a second set of conduction band minima and also enable the anisotropy of the relaxation time for electron scattering to be determined. © 1969.
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页码：231 / &
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