THRESHOLD CURRENT-DENSITY AND INCUBATION-TIME TO ELECTROMIGRATION IN GOLD-FILMS

被引：46

作者：

KINSBRON, E ^{[1
]}

BLECH, IA ^{[1
]}

KOMEM, Y ^{[1
]}

机构：

[1] ISRAEL INST TECHNOL,DEPT MAT ENGN TECH,HAIFA 32000,ISRAEL

来源：

THIN SOLID FILMS | 1977年 / 46卷 / 02期

关键词：

D O I：

10.1016/0040-6090(77)90056-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：139 / 150

页数：12

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[1] ELECTROMIGRATION-INDUCED FAILURES IN, AND MICROSTRUCTURE AND RESISTIVITY OF, SPUTTERED GOLD FILMS
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[8] STUDY OF CONDUCTIVE GOLD FILM LIFETIME UNDER HIGH-CURRENT DENSITIES
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[9] ACTIVATION-ENERGY FOR ELECTROMIGRATION AND GRAIN-BOUNDARY SELF-DIFFUSION IN GOLD
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[10] DIRECT MEASUREMENT OF DIFFUSION AT TEMPERATURES LESS THAN 0.5 TM
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