MAGNETIC AND ELECTRONIC-PROPERTIES OF SN1-XGDXTE

被引：16

作者：

STORY, T

GORSKA, M

ARCISZEWSKA, M

GRODZICKA, E

GOLACKI, Z

GALAZKA, RR

机构：

[1] Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1995年 / 140卷

关键词：

D O I：

10.1016/0304-8853(94)01211-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Magnetic susceptibility, electron paramagnetic resonance and transport properties of Sn1-xGdxTe semimagnetic semiconductor with 0.04 less than or equal to x less than or equal to 0.07 were investigated as a function of carrier concentration. For crystals with x < 0.05, an abrupt increase of antiferromagnetic interspin interactions was found in samples with carrier concentration p = p(*) = (2.5-3.5) X 10(20) cm(-3) as compared to samples with p > p(*).

引用

页码：2041 / 2042

页数：2

共 6 条

[1] CARRIER-INDUCED BREAKDOWN OF FERROMAGNETISM [J].