SUPPRESSION OF AL-GA INTERDIFFUSION BY A WNX FILM ON AN ALXGA1-XAS/ALAS SUPERLATTICE STRUCTURE

被引：15

作者：

ALLEN, EL

PASS, CJ

DEAL, MD

PLUMMER, JD

CHIA, VFK

机构：

[1] STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305

[2] CHARLES EVANS & ASSOCIATES,REDWOOD CITY,CA 94063

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 25期

关键词：

D O I：

10.1063/1.105748

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Undoped AlAs/AlxGa1-xAs superlattice structures were grown by molecular beam epitaxy and annealed under Si3N4, SiO2, or WNx encapsulant films, both with and without the presence of a Sn-12O implant. Enhancement of the Al-Ga interdiffusion coefficient occurred under the Si3N4 and SiO2 films due to indiffusion of Si from the films. Enhancement was even greater during diffusion of the Sn implant. In both cases intermixing enhancement was due to the Fermi level effect. Underneath the WNx film, however, interdiffusion was suppressed even in the presence of the Sn dopant.

引用

页码：3252 / 3254

页数：3

共 6 条

[1] A COMPARISON OF THE DIFFUSION BEHAVIOR OF ION-IMPLANTED SN, GE, AND SI IN GALLIUM-ARSENIDE [J].

ALLEN, EL ;

MURRAY, JJ ;

DEAL, MD ;

PLUMMER, JD ;

JONES, KS ;

RUBART, WS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (11) :3440-3449

[2]

ALLEN EL, 1990, J APPL PHYS, V67, P3314

[3] ATOM DIFFUSION AND IMPURITY-INDUCED LAYER DISORDERING IN QUANTUM WELL III-V SEMICONDUCTOR HETEROSTRUCTURES [J].

DEPPE, DG ;

HOLONYAK, N .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (12) :R93-R113

[4] COLUMN-III VACANCY-INDUCED AND IMPURITY-INDUCED LAYER DISORDERING OF ALXGA1-XAS-GAAS HETEROSTRUCTURES WITH SIO2 OR SI3N4 DIFFUSION SOURCES [J].

GUIDO, LJ ;

MAJOR, JS ;

BAKER, JE ;

PLANO, WE ;

HOLONYAK, N ;

HSIEH, KC ;

BURNHAM, RD .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (11) :6813-6818

[5] MECHANISMS OF DOPING-ENHANCED SUPERLATTICE DISORDERING AND OF GALLIUM SELF-DIFFUSION IN GAAS [J].

TAN, TY ;

GOSELE, U .

APPLIED PHYSICS LETTERS, 1988, 52 (15) :1240-1242

[6] CHARACTERIZATION OF WNX/GAAS SCHOTTKY CONTACTS FORMED BY REACTIVE RF-SPUTTERING [J].

YAMAGISHI, H ;

YAMAMOTO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (01) :122-129

← 1 →