Rapid growth mechanism and field emission properties of ZnO nanowires

In order to prepare ZnO nanowires with excellent field emission performance, the growth mechanism and field emission performance were studied. Firstly, the high aspect ratio ZnO nanowires were prepared by the optimized two-step method. Secondly, the morphologies of ZnO were characterized by SEM. Then, based on the analysis of the morphological features, the rapid growth mechanism of the ZnO nanowires film under strong alkali conditions were described. Finally, the field emission performance of a typical sample was tested. The test results show that with the optimized two-step method, nanowires with a diameter of 40 similar to 50 nm , a length of 2.2 similar to 2.7 mu m, and an aspect ratio of up to 54 can be obtained in only 3 h. The turn-on field of the film is 3.6 V/um , the threshold electric field is 9. 1 V/mu m, and the field enhancement factor beta is as high as 3 391. Studies have shown that high pH solution can accelerate the preferential growth of ZnO nanowire along the C-axis direction, obtain high aspect ratio ZnO nanowires, thereby obtaining excellent field emission performance.